Energy-Efficient Strain-Programmable Probabilistic Bits
The manipulation of quantum properties of electrons to store information has been used for decades, and its continued study is key to the development of new fields such as spintronics and quantum computing. The discovery of strain-induced properties of stacked CrSBr layers promises advances in both unparalleled control of key material properties, as well as energy efficiency, in the development of new information storage components.